Process for fabricating films of uniform properties on semiconductor devices

ABSTRACT

A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 09/041,913,filed Mar. 13, 1998, now U.S. Pat. No. 6,833,280, issued Dec. 21, 2004.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to processes to form a film ofsubstantially uniform properties on the active surface of asemiconductor substrate, such as a semiconductor wafer or otherstructure, of silicon, polysilicon, gallium arsenide, silicon oninsulator (SOI), silicon on sapphire (SOS), silicon on glass (SOG) orany other material which is useful as a semiconductor substrate inintegrated circuit applications. Particularly, the process of thepresent invention includes forming films upon a semiconductor substrateat non-steady state temperatures in order to facilitate thesubstantially uniform properties of such films. The present inventionalso relates to processes for forming thin films having substantiallyuniform properties across the surface of a semiconductor wafer or othersubstrate during the formation of a layer of a material thereupon bycreating temperature gradients between the center and edge of thesemiconductor wafer.

2. Background of Related Art

As the integrated circuitry that is carried upon semiconductorsubstrates becomes ever-smaller and the surface area of such devicesbecomes ever-larger, the thermal output of such devices increases.Inconsistencies in the properties of the electrically conductive,semiconductive, and non-conductive layers of a semiconductor waferincluding, without limitation, thickness, sheet resistance,reflectivity, transmissivity, absorptivity, dielectric constant, andvarious other characteristics of such layers, affect the electricalperformance of semiconductor substrates, and therefore contribute, inpart, to increased heat output, consequently higher operatingtemperatures, and other inefficiencies of many state-of-the-artsemiconductor substrates.

The formation of films of substantially uniform properties onsemiconductor wafer or other substrate active surfaces requires controlover the rate at which chemical reactions occur over the active surface.Since elevated temperatures drive these layer-forming reactions, theability to control the uniform distribution of reactants over asemiconductor wafer's active surface is affected by the temperature ofthe region of the semiconductor wafer that lies therebeneath and theconcentration of the reactants thereabove. If the temperature is uniform(i.e., a temperature gradient does not exist) across the active surfaceof a semiconductor wafer, reaction rate gradients may develop thereover,which phenomenon leads to variations in the properties of the layersformed on the active surface. Thus, during the fabrication or formationof layers on semiconductor wafers, a lack of temperature gradientsthereacross is undesirable.

Various techniques are known in the art for forming layers on the activesurface of semiconductor wafers or other substrates. One such technique,known as single wafer optical processing, combines low thermal massphoton-assisted rapid wafer heating with reactive ambient semiconductorprocessing. Optical processing permits the rapid alteration of both thetemperature of the semiconductor substrate and the process environment.Consequently, each of the fabrication steps and their sub-processes maybe independently optimized in order to improve the overall electricalperformance of the resulting semiconductor substrates.

Another technique that is conventionally employed to form layers on theactive surface of semiconductor substrates is known as rapid thermalprocessing (RTP). Rapid thermal processing techniques typically employradiant energy to heat the semiconductor substrate to very hightemperatures (e.g., 420° C. to 1150° C.) for short time periods. Thewidespread use of rapid thermal processing may, in part, be due to therepeatable quality of the films formed thereby. Rapid thermal processingmay be employed to form oxide layers, nitride layers, doped layers, andto perform different types of thermal anneals of layers on semiconductorsubstrates.

Similarly, several types of chemical vapor deposition chambers andtechniques are conventionally employed to form dielectric layers (e.g.,oxides, nitrides, and advanced dielectrics), semiconductor layers (e.g.,amorphous silicon and polysilicon), and electrically conductive layers(e.g., aluminum, copper, tungsten, and titanium nitride), onsemiconductor substrate active surfaces.

Many such techniques, however, are unable to generate or maintainsubstantially uniform amounts of layer-forming reactions across thesurface of semiconductor wafers and, therefore, do not form thin filmsof uniform properties upon the active surface of semiconductor wafers.Such conventional layer formation techniques typically utilizesteady-state conditions (i.e., the reaction temperature is maintainedwithin a typically small predetermined range), which often permit theformation of significant reaction rate gradients across the activesurface of the semiconductor wafer, thereby limiting the uniformity offilms formed thereon. Thus, by maintaining a stable temperature duringlayer formation, many of these conventional systems actually impede auniform reaction across the surface of the semiconductor wafers.Consequently, layers of non-uniform properties form on the semiconductorwafers. Further, with many of the current layer formation techniques, asthe size of semiconductor wafers increases, and larger non-wafersemiconductor substrates become more commonly used, variations in layerproperties become more pronounced due to the greater depletion ofreactants over some regions thereof than other regions thereof.

U.S. Pat. No. 5,635,409 (the “'409 patent”), issued to Mehrdad M.Moslehi on Jun. 3, 1997, discloses a control system and process thatattempt to reduce or eliminate the development of temperature gradients(i.e., optimize process uniformity) over semiconductor wafer activesurfaces during each of the heat-up, steady-state heating and cool-downphases by monitoring and adjusting the reaction chamber temperature atvarious locations. According to the process of the '409 patent, thesemiconductor substrate and reaction chamber temperatures are adjustedin a linear fashion during the heat-up and cool-down phases.

However, use of the control system of the '409 patent is somewhatundesirable since it creates and maintains a substantially uniform or“steady state” temperature over the semiconductor wafer that, asexplained above, does not facilitate, and actually impedes, reactionrate uniformity. Moreover, due to the ever-increasing size ofsemiconductor wafers and other substrates, the maintenance of a constanttemperature over the surface of such semiconductor wafers may furtherdecrease the uniformity of properties of thin films formed thereon.

The generation and maintenance of a uniform temperature across asemiconductor wafer may, however, be desirable while forming layers ofsome materials on the semiconductor wafer. For example, uniformsemiconductor wafer temperatures are desirable during dopant diffusionprocesses, metal salicidation processes, and where multiple layershaving different coefficients of expansion are being formed upon thesemiconductor wafer and annealed to one another. Conventional layerformation processes which generate and maintain uniform semiconductorwafer temperatures, however, may also induce stress on the semiconductorwafer, which may in turn cause lattice defects in the semiconductorwafer, such as point, line, or area slip defects.

Thus, a need exists for a process forming films of substantially uniformproperties on the active surface of semiconductor substrates, whilereducing stress on the semiconductor substrates.

BRIEF SUMMARY OF THE INVENTION

The present invention addresses each of the foregoing needs by formingmaterial layers upon a semiconductor substrate under non-steady statetemperature conditions. Stated another way, the inventive process formslayers during non-steady state phases, such as ramp-up and ramp-down ofthe reaction chamber temperature, rather than during a phase where thetemperature of a reaction chamber or furnace is held steady.

In a first embodiment of the process of the present invention, a layeris formed upon a semiconductor substrate during a ramp-up of the reactortemperature. Deposition under such conditions of increasing temperaturefacilitates the formation of a layer of substantially uniform propertiesover the semiconductor substrate. The first embodiment of the process ofthe present invention is particularly useful for forming layers ofmaterials upon semiconductor substrates, which materials, where used toform layers by conventional steady-state techniques, typically result ina material layer thinner at the edge region of a semiconductor substratethan at the center region thereof.

A second embodiment of the process of the present invention includes theformation of a material layer during a controlled ramp-down of thereactor temperature, during which the temperature at the edge region ofthe semiconductor substrate is cooler than that at the center regionthereof. The second embodiment facilitates the formation of uniformproperty layers of materials which, where employed with conventionalsteady-state layer forming techniques, typically result in layersthicker at the edge regions of a semiconductor substrate than at thecenter region thereof.

In both the first and second embodiments of the inventive process, alayer may be formed in multiple steps, where more than one ramp-up orramp-down is employed in order to form the layer.

In another embodiment of the inventive process, the reaction chambertemperature is intermittently varied, continually fluctuated oroscillated in order to provide a substantially uniform reaction over thesemiconductor substrate while forming a layer thereon. Such fluctuationin the temperature of the reaction chamber may be effected during theramp-up, the ramp-down, and/or the so-called “steady state” temperaturetrends. During such fluctuation of the temperature of the reactionchamber, the temperature profile, plotted temperature (y-axiscoordinate) over time (x-axis coordinate), may have a saw-tooth (i.e.,linear, with small variations) or a humped configuration. Such variationof the reaction temperature equalizes the reaction rate across thesurface of the semiconductor substrate and may be effected by existingfabrication equipment.

Semiconductor substrates which include material layers formed inaccordance with the processes of the present invention are also withinthe scope of the present invention.

Other advantages of the present invention will become apparent to thoseof ordinary skill in the relevant art through a consideration of theappended drawings and the ensuing description.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a line graph illustrating the heat-up phase temperatures,plotted over time, at which a layer of a material may be formed upon asemiconductor wafer in accordance with a first embodiment of the processof the present invention;

FIG. 2 is a line graph which depicts a variation of the process of FIG.1, wherein the heat-up phase and deposition during the same arerepeated;

FIG. 3 is a line graph illustrating the cool-down phase temperatures,plotted over time, at which a layer of a material may be formed upon asemiconductor wafer in accordance with a second embodiment of theprocess of the present invention;

FIG. 4 is a 49 point contour map which depicts a silicon nitride layerthat was formed by prior art techniques;

FIG. 5 is a 49 point contour map which depicts a layer that was formedin accordance with a second embodiment of the process of the presentinvention;

FIG. 6 is a line graph which depicts a variation of the process of FIG.3, wherein the cool-down phase and deposition during the same arerepeated;

FIG. 7 is a line graph which illustrates the heat-up phase temperaturesover time as another embodiment of the process of the present inventionis employed to form a layer upon a semiconductor wafer;

FIG. 7 a is a line graph which illustrates the heat-up phasetemperatures over time as a variation of the process of FIG. 7 isemployed to form a layer upon a semiconductor wafer;

FIG. 8 is a line graph which illustrates the deposition phasetemperatures over time as the process of FIG. 7 is employed to form alayer upon a semiconductor wafer;

FIG. 9 is a line graph which illustrates the cool-down phasetemperatures over time as the process of FIG. 7 is employed to form alayer upon a semiconductor wafer;

FIGS. 10 a through 10 e are line graphs which illustrate use of theprocess of FIG. 7 during different deposition phases;

FIG. 11 is a schematic cross-sectional view of a semiconductor substratewhich includes a layer of substantially uniform properties which hasbeen formed in accordance with the process of the present invention; and

FIG. 12 is a schematic cross-sectional representation of a reactionchamber with semiconductor wafers positioned therein.

DETAILED DESCRIPTION OF THE INVENTION

The process of the present invention includes the formation of amaterial layer, or film, upon an active surface of a semiconductor waferor other substrate under non-steady state temperature conditions.“Non-steady state,” as used herein, refers to varying, oscillating,continually fluctuating, or summing reaction chamber temperatures withone or more signals of varying frequency, amplitude or phase. Suchlayers or films may be formed by known deposition or growth techniquesor reactions that are modified by employing temperature variationaccording to the process of the present invention, and using knownequipment programmed to effect such temperature variation during theformation of the layer or film. Such deposition and growth techniquesinclude introducing into the reaction chamber matter of a type thatpromotes the formation of a material layer upon the substrate inproximity to an exposed surface of the substrate.

Temperature variation according to the process of the present inventionmay be effected by altering one or more characteristics of the powerthat is required by a heat generating source, such as a conventionalfurnace or a rapid thermal processing system. Various characteristics ofthe power that may be altered in order to effect temperature variationinclude frequency, amplitude and phase. Similarly, multiple powerfrequencies may be summed. Altering such characteristics of theheat-generating power facilitates creation of temperature variations ofvirtually any profile, as may be illustrated by a line graph whereintemperature is plotted over time. Alternatively, the temperaturevariation of the process of the present invention may be effected bysetting the process chamber to a predetermined, fixed temperatureprofile, which is also referred to as a temperature set point profile. Afeedback control system of the type known in the art may be employed toalter the amount of power that is input into the process chamber inorder to increase, maintain, or reduce the amount of heat that isgenerated in the process chamber and thereby substantially emulate thetemperature set point profile.

The use of non-steady state temperature conditions facilitates theformation of a layer of a material that includes substantially uniformproperties. The term “properties” is used herein as comprising one ormore of the thickness, sheet resistance, reflectivity, transmissivity,absorptivity, dielectric constant, and various other characteristics ofthe layer.

With reference to FIG. 1, which is a line graph that depicts thetemperature of a reaction chamber (y-axis) plotted against time(x-axis), a first embodiment of the process of the present inventionincludes forming a material layer upon a semiconductor wafer during aheat-up phase, which is typically referred to as a ramp-up of thetemperature of the environment that surrounds the semiconductor wafer,which is also referred to for simplicity as the reaction chambertemperature. Thus, the layer is formed while the temperature of thesemiconductor wafer increases from a first temperature, represented as●, to a second temperature, represented as X. As those of skill in theart are aware, as the reaction chamber temperature is increased, asemiconductor wafer's edge region heats up more quickly than its centerregion. Thus, during the heat-up phase, the edge region of thesemiconductor wafer is typically a higher temperature at a given pointin time than the center region of the same.

The first embodiment of the process is particularly useful for enhancingthe uniformity of materials that, under steady state reaction chambertemperature conditions, form thicker layers at the center region of asemiconductor wafer than at the edge region of the same due to a higherreaction rate at the center region than at the edge region since, insome layer formation processes, fewer reactants are available at theedge region than at the center region of a semiconductor wafer, whichmay result in the formation of a layer with a “convex” or “dome” (i.e.,inverted “bowl” or “dish”) shaped contour. Thus, the process of thepresent invention is useful for preventing the “convex” or “dome” (i.e.,inverted “bowl” or “dish”) shaped contours of layers that are typicallyformed by many conventionally employed processes which deposit or growlayers on semiconductor wafers under steady state temperatureconditions. As explained previously, such non-uniformities are typicallycaused by the differential depletion of reactants, or the creation ofreactant gradients, over the surface of the semiconductor wafer.

The formation of a doped amorphous silicon layer of substantiallyuniform properties is exemplary of the first embodiment of the processof the present invention. Typical conventional doped amorphous silicondeposition techniques, such as the exemplary process that is disclosedin U.S. Pat. No. 4,963,506 (“the '506 patent), which issued to Hang M.Liaw, et al. on Oct. 16, 1990, the disclosure of which is herebyincorporated herein by reference in its entirety, occur under steadystate conditions within a reaction chamber that has been heated tobetween about 500° C. and 600° C. In contrast, the deposition of dopedamorphous silicon in accordance with the first embodiment of the presentinvention occurs while the reaction chamber temperature is beingincreased to about 600° C. First, a semiconductor wafer upon which thedoped amorphous silicon layer is to be formed is placed into a reactionchamber while the temperature within the chamber is held at “idle”(e.g., a temperature of about 500° C.). The temperature within thereaction chamber is then increased. As the reaction chamber reaches adesirable initial deposition temperature (e.g., about 525° C. for dopedamorphous silicon), the appropriate, conventionally employed reactantsare introduced therein. The rate at which the reaction chambertemperature is subsequently increased and the amount of the temperatureincrease is dependent upon several factors, including without limitationthe specific type of material that is being deposited, the desired layerproperties and the desired level of layer uniformity. The introductionof reactants into the reaction chamber continues until the temperaturewithin the reaction chamber reaches a desired terminal depositiontemperature (e.g., about 500° C. to 550° C. for doped amorphoussilicon), at which temperature the introduction of reactants is stopped.Subsequently, the temperature within the reaction chamber is decreasedto the “idle” temperature and the semiconductor wafer may be removedtherefrom.

For the purpose of comparison, a layer of doped amorphous silicon wasformed upon a semiconductor wafer in accordance with a conventionalsteady state deposition technique while the semiconductor wafer wasbeing rotated. The doped amorphous silicon layer had a “convex” or“dome” shaped contour, indicating that the doped amorphous silicon layeris thicker at the center region of the semiconductor wafer than at theedge region of the same. The doped amorphous silicon layer that wasdeposited by a prior art technique varied about 35 Å from its thickestmeasured point (1015.81 Å), near the center region of the semiconductorwafer, to its thinnest measured point (979.33 Å), near the wafer's edgeregion, which is a variation of about 3.5% from the median thickness(about 1002 Å) of the layer; thus, the standard deviation of thevariation in thickness was about 1.2%.

In contrast, a doped amorphous silicon layer that was formed on asemiconductor wafer in accordance with the first embodiment of theinventive process, as explained above, exhibited a more uniformthickness than that of the conventional technique described in thepreceding paragraph, as evidenced by the lack of an inverted “bowl” or“dish” shaped contour. Stated in relative terms, the doped amorphoussilicon layer varied only about 8 Å from its thickest measured point(1003.72 Å) to its thinnest measured point (995.65 Å), which is avariation of only about 0.8% from the median thickness (1001.20 Å) ofthe layer; thus, the standard deviation of the variation in thicknesswas only about 0.25%. The doped amorphous silicon layer that was formedin accordance with the first embodiment of the inventive process hadabout one-fifth to about one-sixth the variation in thickness of thedoped amorphous silicon layer as a doped amorphous silicon layer ofsimilar overall thickness that was deposited under prior art steadystate temperature conditions.

Similarly, a layer of doped polysilicon may be formed in accordance withthe first embodiment of the inventive process. Typical conventionaldoped polysilicon deposition techniques, such as the exemplary processthat is disclosed in the '506 patent, occur under steady stateconditions within a reaction chamber that has been heated to betweenabout 600° C. and 700° C. In contrast, the deposition of dopedpolysilicon in accordance with the first embodiment of the presentinvention occurs while the reaction chamber temperature is beingincreased from an initial temperature to about 580° C. to about 680° C.,or as high as about 800° C. First, a semiconductor wafer upon which thedoped amorphous silicon layer is to be formed is placed into a reactionchamber while the temperature within the chamber is held at “idle”(e.g., a temperature of about 500° C.). The temperature within thereaction chamber is then increased. As the reaction chamber reaches adesirable initial deposition temperature (e.g., about 575° C. to about585° C. for doped polysilicon), the appropriate, conventionally employedreactants are introduced therein. The introduction of reactants into thereaction chamber continues until the temperature within the reactionchamber reaches a desired terminal deposition temperature (e.g., about675° C. for doped polysilicon). Subsequently, the temperature within thereaction chamber is decreased to the “idle” temperature and thesemiconductor wafer may be removed therefrom.

The line graph of FIG. 2 depicts a variation of the first embodimentwherein, following the formation of a portion of a layer while thetemperature of the reaction temperature is between first temperature ●and second temperature X and reduction of the temperature within thereaction chamber, the heat-up phase may be repeated at least once toform another portion of the layer. Such repetitious heating-up isparticularly useful for forming layers of materials which require alarge increase in temperature over a relatively short period of time.Preferably, when such repetitious heating is employed in accordance withthe first embodiment of the process, layer formation is effected onlyduring the heat-up phases of the cycle (i.e., during temperatureincreases).

FIG. 3 illustrates a second embodiment of the process of the presentinvention, wherein a layer is formed upon a semiconductor wafer during acool-down phase, which is typically referred to as a ramp-down in thereaction chamber temperature. Formation of the layer begins after thetemperature within the reaction chamber reaches a first temperature ●,and continues until the temperature within the reaction chamber drops toa second temperature X. Thus, deposition occurs in accordance with thesecond embodiment of the process as the semiconductor wafer is cooleddown. Preferably, the temperature within the reaction chamber isdecreased at a controlled rate. The amount of temperature decrease andthe rate at which the temperature is decreased are dependent upon thematerial from which a layer is formed. As those of skill in the art areaware, a semiconductor wafer's edge region cools at a faster rate thanthe center region of the same. Thus, during the cool-down phase, thetemperature of the edge region of the semiconductor wafer is typicallylower at a given point in time than that of its center region.

The second embodiment of the inventive process is particularly usefulfor facilitating the formation of layers of substantially uniformproperties from materials that, under steady state temperatureconditions, form thinner layers at the center region of a semiconductorwafer than at its edge region. Thus, the second embodiment of theprocess is useful for preventing the formation of layers having concave“bowl” or “dish” shaped contours, which may occur when conventionaltechniques are employed.

For example, when conventional low pressure chemical vapor deposition(LPCVD) techniques, such as the exemplary process that is disclosed inU.S. Pat. No. 4,395,438 (the “'438 patent”), which issued to Ping-WangChiang on Jul. 26, 1983, the disclosure of which is hereby incorporatedherein by reference in its entirety, are employed to form siliconnitride (Si₃N₄) layers on semiconductor wafers, the steady statetemperatures within the reaction chamber are typically in the 700° C. to800° C. range. Silicon nitride deposition in accordance with the processof the present invention includes a controlled ramp-down of thetemperature within the reaction chamber from about 780° C. to about 645°C., during which the appropriate, conventionally employed chemicalreactants are introduced into the reaction chamber.

FIGS. 4 and 5 are 49 point contour maps of semiconductor wafers bearingthick (i.e., 1,800 Å to 2,000 Å) silicon nitride layers. The contour mapof FIG. 4 illustrates the thickness of a silicon nitride layer that hasbeen formed upon a semiconductor wafer in a hot wall furnace byconventional steady state temperature deposition techniques. The siliconnitride layer shown in FIG. 4 has a “bowl” or “dish” shaped contour,which is typically caused by reactant gradients over the surface of asemiconductor wafer. As noted previously, when conventional techniquesare employed which utilize steady state temperatures throughout thereaction chamber, the reaction rate of the edge region of asemiconductor wafer is higher than the temperature of the center regionof the same. Additionally, it is known in the art that thicker layers ofsome materials form upon the higher temperature regions of asemiconductor wafer than upon the lower temperature regions thereof.Consequently, the use of steady state reaction temperatures throughout adeposition process may result in the formation of a silicon nitridelayer having non-uniform properties due to the generation of reactantgradients thereabove. As illustrated by FIG. 4, the layer is thicker atthe edge region of the semiconductor wafer than at its center region.The thickness of the silicon nitride layer varied, from its thinnestmeasured point (1,808.59 Å) to its thickest measured point (1,874.90 Å),by about 66 Å, which is about 3.6% of the total average layer thickness(1,833.47 Å); thus, the standard deviation in layer thickness was about1.1%.

In contrast, FIG. 5 is a contour map which depicts the thickness of asilicon nitride layer that has been formed upon a semiconductor wafer inaccordance with the second embodiment of the process of the presentinvention (i.e., during a cool-down phase). The silicon nitride layer ofFIG. 5 has a more uniform thickness than that of FIG. 4. The siliconnitride layer varied about 48 Å from its thickest measured point(1,859.97 Å) to its thinnest measured point (1,811.57 Å), which is avariation of about 2.6% from the median thickness (1,836.30 Å) of thelayer; thus, the standard deviation of the variation in thickness wasonly about 0.75%. Moreover, the thickness of the silicon nitride layerdepicted in FIG. 5 does not create the bowl shaped contour of FIG. 4,indicating that when the process of the present invention is employed inorder to form a silicon nitride layer upon a semiconductor wafer, therate at which such a layer is formed on the edge region of thesemiconductor wafer is not significantly higher than the rate at which alayer is formed on the center region of the same.

Similarly, an oxide layer may be formed upon a semiconductor wafer inaccordance with the second embodiment of the present invention bytechniques that employ tetraethyl-ortho-silicate (TEOS), such as theexemplary process that is disclosed in U.S. Pat. No. 4,872,947 (the“'947 patent”), which issued to David N. Wang et al. on Oct. 18, 1989,the disclosure of which is hereby incorporated herein by reference inits entirety. A semiconductor wafer upon which a layer of TEOS is to beformed is positioned within a reaction chamber while the temperaturewithin the chamber is at an “idle” temperature for conventional TEOSlayer formation, about 500° C. The temperature within the reactionchamber is then increased to at least about the temperature at whichTEOS layer formation by conventional processes occurs, about 600° C. toabout 625° C., which is referred to as a first temperature. A controlledramp-down of the temperature within the reaction chamber to a second, ortermination, temperature is then effected. During the controlledramp-down, the appropriate, conventionally employed chemical reactantsare introduced into the reaction chamber, wherein a TEOS layer forms ona surface of the semiconductor wafer. After a TEOS layer of the desiredthickness has been formed, the temperature within the reaction chambermay be reduced to “idle” and the semiconductor wafer removed therefrom.

A TEOS layer that has been formed in accordance with the secondembodiment of the process of the present invention has substantiallyuniform properties. Such an exemplary TEOS layer, which was formed upona semiconductor wafer that was positioned centrally in a reactionchamber, varied only about 38 Å from its thickest measured point (1511Å) to its thinnest measured point (1474 Å), which is a variation of onlyabout 2.5% from the median thickness (1484 Å) of the TEOS layer. Incontrast, a TEOS layer that was formed under steady state conditions byconventional processes varied about 104 Å from its thickest measuredpoint (1557 Å) to its thinnest measured point (1453 Å), which is avariation of about 7.0% from the median thickness (1496 Å) of theconventionally-formed TEOS layer.

Similarly, in comparison to conventional layer forming techniques, thesecond embodiment of the process of the present invention was useful forforming TEOS layers of substantially uniform properties uponsemiconductor wafers that were positioned near the top and near thebottom of the reaction chamber. A TEOS layer that was formed upon asemiconductor wafer that was positioned near the top of the reactionchamber, and in accordance with the second embodiment, varied about 70.4Å from its thickest measured point to its thinnest measured point, witha mean thickness of 1465.4 Å. Thus, the TEOS layer had a thicknessvariation of 4.8% of the mean layer thickness. In contrast, thevariation in thickness (114.9 Å) of a conventionally formed TEOS layerthat was formed upon a similarly positioned semiconductor wafer varied7.8% from the mean thickness (1471.7 Å) thereof.

Similar results occurred when TEOS layers were formed on semiconductorwafers that were positioned near the bottom of the reaction chamber.When the second embodiment of the inventive process was employed, thevariation in thickness of the TEOS layer was 4.5% (a range of 64.6 Å) ofthe mean thickness (1433.3 Å) of the same. A conventionally formed TEOSlayer, however, varied 9.6% (a range of 147.0 Å) from the mean thickness(1527.8 Å) thereof. Thus, the TEOS layer that was formed in accordancewith the second embodiment of the process of the present invention hadabout one-half to about one-third of the thickness variation of theconventionally formed TEOS layer.

FIG. 6 is a line graph which illustrates the temperature of a reactionchamber plotted over time during repetitious cool-down phases. Similarto the repetitious heating-up that was explained above in reference tothe first embodiment of the inventive process, a variation of the secondembodiment of the inventive process includes the repetitiouscooling-down of the temperature within the reaction chamber from firsttemperature ● to second temperature X in order to facilitate theformation of a substantially uniform layer upon a surface of asemiconductor wafer. Such repetitious cooling-down is particularlyuseful for forming layers of materials that require a small temperaturechange and for forming layers which require a large decrease intemperature over a relatively short period of time. Preferably, whensuch repetitious cooling-down is employed, layer formation is effectedonly during the cool-down portions of the cycle.

In another embodiment of the layer formation process of the presentinvention, the temperature within the reaction chamber may beoscillated, fluctuated, or intermittently varied during at least aportion of any of the heat-up, substantially steady state, or cool-downphases, or any combination thereof. Such intermittent variation of thetemperature generates and maintains a substantially uniform temperatureover the surface of a semiconductor wafer. Temperature uniformity overthe surface of a semiconductor wafer is desirable for layer formingprocesses including, without limitation, dopant diffusion, alloying orany other diffusion-limited process, and the formation of multiplelayers having different coefficients of expansion. Additionally, thegeneration of substantially uniform temperature over a semiconductorwafer may reduce or eliminate stresses that may result in the formationof lattice defects, such as point, line (e.g., slip, straightdislocations, dislocation loops, etc.), area, volume, or other thin filmdefects.

During the heat-up phase, the process of the present invention mayinclude an oscillating increase in the temperature within the reactionchamber. As the temperature within the reaction chamber is ramped upduring the heat-up phase, each increase in reactor temperature isfollowed by a temperature decrease. As illustrated by FIG. 7, a lineargraph of such a heat-up phase, wherein temperature is plotted over time,includes fluctuations in temperature which impart the graph with a sawtooth, or a zig-zag configuration. Other oscillating heat-up patternsare also within the scope of the present invention, as are lesspredictable variations in the reactor temperature during the heat-up oranneal phases. The amount of temperature variation between the high andlow points of each zig-zag and the durations of each temperatureincrease and subsequent temperature decrease are optimized in order toprovide uniform temperatures across the semiconductor wafer at all timesduring the formation of a layer or film thereon. This embodiment of thepresent invention facilitates a uniform cross-wafer temperature duringeither of the heat up or cool down phases. Although the graph of FIG. 7represents each fluctuation as an increase in temperature followed by asmaller decrease in temperature, temperature increases that are followedby no change (as illustrated by FIG. 7 a) in temperature for a period oftime or by lower rate temperature increases are also within the scope ofthe present invention.

The oscillating increase in the reaction chamber temperature during theheat-up phase facilitates a uniform increase in the temperature acrossthe various regions of a semiconductor wafer, including its edge regionand center region. As those of skill in the art are aware, as thetemperature within many conventional reaction chambers is increased, asemiconductor wafer's edge region heats up more quickly than its centerregion. Thus, during the heat-up phase, the rate at which thetemperature of the center region of a semiconductor wafer increasestypically lags behind the rate at which the temperature of its edgeregion increases. Similarly, the rate at which the temperature of thecenter region decreases lags behind the rate at which the temperature ofthe wafer's edge region decreases. By intermittently decreasing thetemperature within the reaction chamber for short periods of time, thetemperature of the edge region of a semiconductor wafer decreases, whilethe temperature of the center region remains substantially the same,permitting the temperature of the center region of a semiconductor waferto “catch up” to the temperature at the edge region of the wafer,thereby equalizing the temperature across the semiconductor wafer'sactive surface during the heat-up phase, and reducing or eliminating thegeneration of any temperature gradients thereon in order to facilitatethe formation of a layer of substantially uniform properties thereuponand reducing the amount of stress that is induced on a semiconductorwafer, thereby potentially decreasing the occurrence of semiconductorwafer lattice defects, such as point, line, and area slip defects.

Oscillation of the temperature within the reaction chamber may also beeffected during a so-called “steady state,” or “conventional” annealphase, which is also referred to as a substantially steady statetemperature trend. As in the heat-up phase, oscillation, fluctuation, orintermittent variation of the temperature within the reaction chambermaintains a substantially uniform temperature over the surface of asemiconductor wafer during the “conventional” anneal phase. FIG. 8 is aline graph which illustrates the temperature within the reaction chamberplotted over time during a “conventional” anneal phase. Although thegraph line is saw tooth configured, as explained previously, eachtemperature increase is not necessarily followed by a decrease intemperature. Similarly, other oscillating heat-up patterns and lesspredictable variations in the temperature of the surrounding environmentduring the “conventional” anneal phase are also within the scope of thepresent invention. During the “conventional” anneal phase, thetemperature may remain within a predetermined range.

Varying the reactor temperature to which a semiconductor wafer issubjected during a “conventional” anneal phase has essentially the sameeffect as described above in reference to the heat-up phase. Understeady state temperature conditions, the edge region of a semiconductorwafer absorbs thermal energy more quickly than the wafer's centerregion, which may create a temperature gradient over the active surfaceof the wafer. The edge region of a semiconductor wafer also, however,dissipates thermal energy at a higher rate than the center region. Thus,by constantly varying the reactor temperature during the “conventional”anneal phase, the semiconductor wafer's temperature substantiallyequalizes, facilitating the maintenance of a substantially uniformtemperature over all regions of the semiconductor wafer.

Temperature oscillation during the cool-down phase, similar to thatdescribed above in reference to the heat-up and “conventional” annealphases, may also be employed in accordance with the process of thepresent invention. The edge region of a semiconductor wafer dissipatesthermal energy (i.e., cools down) more quickly than the wafer's centerregion. Stated another way, the rate at which the center region of asemiconductor wafer cools is less than the rate at which its edge regioncools. Since the layer formation may continue into the cool-down phase,it is necessary to control the temperature so as to maintain a uniformtemperature across the semiconductor wafer's active surface during thatphase. By intermittently increasing or maintaining the temperaturewithin the reaction chamber during the cool-down phase, thermal energyis added to the cooler edge region of a semiconductor wafer. Thus, thewafer's edge region is heated up to equalize temperatures across thewafer during the cool-down phase.

Referring now to FIG. 9, which is a line graph which illustrates thetemperatures of the cool-down phase over time as the temperatureoscillation process of the present invention is employed to form a layerupon a semiconductor wafer, the temperature is intermittently varied, asdescribed above in reference to the heat-up and “conventional” annealphases.

Maintaining a uniform temperature across a semiconductor wafer duringthe cool-down phase may also prevent the formation of anydiscontinuities or other flaws that may be induced by non-uniformcooling of the newly formed layer and/or the semiconductor wafer.

FIGS. 10 a through 10 e are line graphs which illustrate some of thedifferent temperature trends during which temperature oscillation withinthe reaction chamber according to the present invention may be utilized.In FIG. 10 a, the temperature within the reaction chamber is continuallyfluctuated during each of the heat-up, anneal, and cool-down phases.FIG. 10 b illustrates fluctuation of the temperature within the reactionchamber in the heat-up phase only. FIG. 10 c illustrates temperaturefluctuation of the reaction chamber temperature only during the“conventional” anneal phase. FIG. 10 d shows fluctuation of thetemperature within the reaction chamber during the “conventional” annealphase and the beginning of the cool-down phase. FIG. 10 e depictsfluctuation of the temperature within the reaction chamber during theheat-up phase, the “conventional” anneal phase, and at the beginning ofthe cool-down phase. Similarly, the temperature within the reactionchamber may be fluctuated during any temperature trend during which alayer is formed upon a semiconductor wafer and during the subsequentcooling of the layer and the wafer, including during brief segments of alarger temperature trend.

The process of the present invention may also be employed to form othertypes of layers upon semiconductor wafers, including, withoutlimitation, oxide, oxynitride, gate hardening, Si₃N₄ reoxidation, metalalloying, and other layers.

An exemplary material layer formation system 16, which is depicted inFIG. 12, includes a reaction chamber 20 with a heating element 22therein. System 16 may also include a temperature sensor 17, or feedbacksystem, of a type known in the art. Temperature sensor 17 is at leastpartially located within reaction chamber 20 so as to facilitatemeasurement of the temperature within reaction chamber 20 or of variousportions of a semiconductor wafer 24 a, 24 b, 24 c or other substratewithin reaction chamber 20. Semiconductor wafers 24 a, 24 b and 24 cupon which a material layer is to be formed are positioned on a platen23 in reaction chamber 20. Platen 23 may be rotated by way of a rotator25. Reaction chamber 20 is heated to a desired temperature by inputtingpower into heating element 22. As the temperature within reactionchamber 20 increases, the temperature of each of semiconductor wafers 24a, 24 b and 24 c increases. A heater 21 may also be positioned withinreaction chamber 20 so as to increase the temperature of at least anedge of one or more semiconductor wafers 24 a, 24 b, 24 c or othersubstrates located in reaction chamber 20. When one or more temperaturesensors 17 in reaction chamber 20 and/or processing element 18 thatreceives signals from temperature sensors 17 determine that thetemperature of reaction chamber 20 has reached a first, or initialanneal, temperature, matter 26 of a type that will promote the formationof a material layer upon each of semiconductor wafers 24 a, 24 b and 24c is introduced into reaction chamber 20 through an inlet 28.Preferably, the introduction of matter 26 into reaction chamber 20 iscontinued until reaction chamber 20 reaches a second, or terminalanneal, temperature.

Preferably, in order to form uniform layers upon semiconductor wafers,the frequency and amount of temperature variation of the process of thepresent invention are optimized for the type of layer formed, thedesired layer properties, and the equipment with which the layer isformed. Similarly, depending upon the initial growth pattern of a formedlayer, the amount and rate of temperature variation may be altered oroptimized in order to enhance uniformity in the properties of the layer.Moreover, repetition of the process, as well as oscillating thetemperature within the reaction chamber, may be employed to formsubstantially uniform layers upon the surface of a semiconductor wafer.

Similarly, when the temperature within the reaction chamber isoscillated while a layer of a material is being deposited upon asemiconductor wafer, the amount or magnitude of oscillation, as well asthe frequency of oscillation, may be altered and optimized in order toenhance uniformity in the layer's properties. Such alteration oroscillation may be responsive to the temperature at various regions ofthe semiconductor wafer, the initial growth pattern of the layer or acombination thereof.

The overall temperature trend (e.g., increasing, decreasing, steadystate) may also be altered from a first trend, or first phase, to asecond trend, or second phase, in order to enhance the uniformity inlayer properties.

The process of the present invention may be employed by various types ofexisting systems including, without limitation, hot and cold wall,single wafer and multiple wafer, vertical and horizontal,plasma-enhanced systems with or without wafer rotation, atmosphericpressure, high pressure and low pressure reactors. The inventive processmay also be used with systems which are typically incapable ofmaintaining uniform temperatures throughout their reaction chambers, andwere, therefore, previously considered undesirable for forming certaintypes of layers. Advantageously, substantially uniform layers may beformed in existing semiconductor substrate fabrication equipment withoutrequiring expensive modifications thereto or the replacement thereof.

Systems which monitor the temperatures of various regions of asemiconductor wafer, and which adjust the temperature within thereaction chamber so as to effect the formation of a layer ofsubstantially uniform properties upon the wafer, including equalizingthe temperature or the reaction rate across the wafer, may also beemployed in combination with the process of the present invention inorder to automate the process and enhance the uniformity of layersformed in accordance therewith. An exemplary control system 18, which isalso referred to herein as a temperature regulator, is schematicallydepicted in FIG. 12. Temperature sensor 17, heating element 22, andheater 21 may each be associated with a known type of temperatureregulator 18. Temperature regulator 18 receives temperature signals fromtemperature sensor 17 and activates or deactivates heating element 22 orheater 21 to effect changes in the temperature of reaction chamber 20 orsemiconductor wafer 24 a, 24 b, 24 c so as to facilitate the formationof a material of substantially uniform thickness on one or moresemiconductor wafers 24 a, 24 b, 24 c or other substrates that have beenplaced in reaction chamber 20. Systems which monitor the properties of alayer of a material during its formation upon a semiconductor wafer, aswell as systems which monitor the overall growth pattern of a layerduring its formation upon a semiconductor wafer, may also be employed incombination with the process of the present invention.

Referring now to FIG. 11, a semiconductor substrate 10 is depicted whichincludes a material layer 12 of substantially uniform properties thathas been formed upon a substrate 14 in accordance with the process ofthe present invention. Preferably, material layer 12 has a variation inthickness, relative to the mean thickness of the material layer, of lessthan about 3.5%. Such semiconductor substrates are also within the scopeof the present invention.

Although the foregoing description contains many specifics, these shouldnot be construed as limiting the scope of the present invention, butmerely as providing illustrations of some of the presently preferredembodiments. Similarly, other embodiments of the invention may bedevised which do not depart from the spirit or scope of the presentinvention. Features from different embodiments may be employed incombination. The scope of this invention is, therefore, indicated andlimited only by the appended claims and their legal equivalents, ratherthan by the foregoing description. All additions, deletions andmodifications to the invention as disclosed herein which fall within themeaning and scope of the claims are to be embraced thereby.

1. A process for substantially equalizing a temperature across asemiconductor substrate, comprising: positioning the semiconductorsubstrate in a reaction chamber; and continuously varying thetemperature within the reaction chamber, including oscillating thetemperature within the reaction chamber at a substantially constantfrequency, to substantially equalize the temperature across thesemiconductor substrate.
 2. The process of claim 1, wherein continuouslyvarying comprises increasing the temperature within the reactionchamber.
 3. The process of claim 2, further comprising cycling thetemperature within the reaction chamber following increasing, cyclingincluding decreasing and re-increasing the temperature within thereaction chamber at least once.
 4. The process of claim 1, whereincontinuously varying comprises decreasing the temperature within thereaction chamber.
 5. The process of claim 4, further comprising cyclingthe temperature within the reaction chamber following decreasing,cycling including increasing and re-decreasing the temperature withinthe reaction chamber at least once.
 6. The process of claim 1, furthercomprising oscillating the temperature during a temperature ramp-upprior to a formation of a layer of a material.
 7. The process of claim1, further comprising oscillating the temperature during a temperatureramp-down subsequent to a formation of a layer of a material.
 8. Theprocess of claim 1, further comprising oscillating the temperatureduring formation of a layer of a material.
 9. The process of claim 1,further comprising altering an overall temperature trend from a firstphase to a second phase.
 10. The process of claim 1, further comprisingaltering a frequency of the oscillating.
 11. The process of claim 1,further comprising altering a magnitude of the oscillating.
 12. Theprocess of claim 1, further comprising optimizing a frequency of theoscillating responsive to an initial growth pattern of a layer of amaterial to enhance uniformity of a property of the layer.
 13. Theprocess of claim 12, wherein optimizing the frequency of the oscillatingcomprises changing a property of the layer that comprises at least oneof thickness, sheet resistance, reflectivity, transmissivity,absorptivity, and dielectric constant.
 14. The process of claim 1,further comprising monitoring an initial growth pattern of a layer of amaterial.
 15. The process of claim 14, further comprising optimizing amagnitude of oscillating in response to monitoring to enhance uniformityof a property of the layer.
 16. The process of claim 15, whereinoptimizing the magnitude of oscillating comprises enhancing a propertyof the layer that comprises at least one of thickness, sheet resistance,reflectivity, transmissivity, absorptivity, etch characteristics, dopantdistribution, and dielectric constant.
 17. The process of claim 1,further comprising monitoring an overall growth pattern of a layer of amaterial.
 18. The process of claim 17, further comprising altering thetemperature within the reaction chamber responsive to monitoring. 19.The process of claim 17, further comprising altering a rate of varyingresponsive to monitoring.
 20. The process of claim 17, furthercomprising cycling the temperature within the reaction chamber followingcontinuously varying.
 21. The process of claim 1, further comprisingmonitoring the temperature of the semiconductor substrate.
 22. Theprocess of claim 1, wherein varying the temperature is effected byaltering a characteristic of power input into the reaction chamber. 23.The process of claim 22, wherein the power characteristic is frequency,amplitude or phase.
 24. A process for maintaining a uniform reactionrate over a surface of a semiconductor substrate, comprising: placingthe semiconductor substrate in a reaction chamber; introducing at leastone reactant into the reaction chamber; and continuously varying atemperature within the reaction chamber during an entire extent ofintroducing at least one reactant into the reaction chamber tofacilitate maintenance of the uniform reaction rate as a reactioninvolving the at least one reactant results in the deposition of atleast one material onto the surface of the substrate, the continuouslyvarying including oscillating the temperature within the reactionchamber.
 25. The process of claim 24, wherein continuously varyingincludes increasing the temperature within the reaction chamber.
 26. Theprocess of claim 25, wherein continuously varying includes cycling thetemperature within the reaction chamber following increasing, cyclingincluding decreasing and re-increasing the temperature within thereaction chamber at least once.
 27. The process of claim 24, whereincontinuously varying includes decreasing the temperature within thereaction chamber.
 28. The process of claim 27, wherein continuouslyvarying includes cycling the temperature within the reaction chamberfollowing decreasing, cycling including increasing and re-decreasing thetemperature within the reaction chamber at least once.
 29. The processof claim 24, further comprising effecting oscillating during atemperature ramp-up prior to introducing.
 30. The process of claim 24,further comprising effecting oscillating during a temperature ramp-downsubsequent to introducing.
 31. The process of claim 24, furthercomprising effecting oscillating during a substantially steady-statetemperature trend.
 32. The process of claim 24, wherein oscillatingcomprises varying the temperature at a constant frequency.
 33. Theprocess of claim 24, further comprising altering an overall temperaturetrend from a first phase to a second phase.
 34. The process of claim 24,further comprising altering a frequency of oscillating.
 35. The processof claim 24, further comprising altering a magnitude of oscillating. 36.The process of claim 24, further comprising optimizing a frequency ofoscillating responsive to an initial growth pattern of a layer of amaterial upon the semiconductor substrate to enhance uniformity of aproperty of the layer.
 37. The process of claim 36, wherein optimizingthe frequency of oscillating comprises enhancing a property of the layerthat comprises at least one of thickness, sheet resistance,reflectivity, transmissivity, absorptivity, etch characteristics, dopantdistribution, and dielectric constant.
 38. The process of claim 36,further comprising forming a material layer exhibiting at least onesubstantially uniform property on the semiconductor substrate.
 39. Theprocess of claim 38, wherein optimizing the frequency of oscillatingcomprises enhancing the at least one substantially uniform property ofthe layer, the at least one substantially uniform property including atleast one of thickness, sheet resistance, reflectivity, transmissivity,absorptivity, etch characteristics, dopant distribution, and dielectricconstant.
 40. The process of claim 24, further comprising monitoring aninitial growth pattern of a layer of a material upon the semiconductorsubstrate.
 41. The process of claim 40, further comprising optimizing amagnitude of oscillating in response to the initial growth pattern ofthe layer of the material upon the semiconductor substrate to enhance asubstantially uniform property of the layer.
 42. The process of claim41, wherein optimizing the magnitude of the oscillating comprisesenhancing a substantially uniform property of the layer that comprisesat least one of thickness, sheet resistance, reflectivity,transmissivity, absorptivity, etch characteristics, dopant distribution,and dielectric constant.
 43. The process of claim 24, further comprisingmonitoring an overall growth pattern of a layer of a material on thesemiconductor substrate.
 44. The process of claim 43, further comprisingaltering the temperature within the reaction chamber responsive tomonitoring.
 45. The process of claim 43, further comprising altering arate of varying responsive to monitoring.
 46. The process of claim 43,further comprising cycling the temperature within the reaction chamberfollowing continuously varying.
 47. The process of claim 24, furthercomprising monitoring the temperature of the semiconductor substrate.48. The process of claim 24, wherein continuously varying is effected byaltering a frequency, an amplitude, or a phase power characteristic. 49.A process for substantially equalizing a temperature across asemiconductor substrate, comprising: positioning the semiconductorsubstrate in a reaction chamber; oscillating the temperature within thereaction chamber to substantially equalize the temperature across thesemiconductor substrate; and monitoring an initial growth pattern of alayer of a material formed on the semiconductor substrate.
 50. Theprocess of claim 49, further comprising optimizing the oscillating inresponse to the monitoring.
 51. A process for substantially equalizing atemperature across a semiconductor substrate, comprising: positioningthe semiconductor substrate in a reaction chamber; continuously varyingthe temperature within the reaction chamber to substantially equalizethe temperature across the semiconductor substrate; “following thecontinuously varying the temperature,” cycling the temperature withinthe reaction chamber; and monitoring an overall growth pattern of alayer of a material on the semiconductor substrate.
 52. The process ofclaim 51, wherein the temperature is continuously varied in response tothe monitoring.
 53. The process of claim 51, wherein a rate at which thetemperature is varied is altered in response to the monitoring.